TN3012L siliconix p-37409erev. b, 04-jul-94 1 n-channel enhancement-mode mosfet transistors product summary v (br)dss min (v) r ds(on) max ( ) v gs(th) (v) i d (a) 300 12 @ v gs = 10 v 0 8 to 3 018 300 20 @ v gs = 4.5 v 0 . 8 to 3 0 . 18 features benefits applications low on-resistance: 9 secondary breakdown free: 320 v low power/voltage driven low input and output leakage excellent thermal stability low offset voltage full-voltage operation easily driven without buffer low error voltage no high-temperature arun-awayo high-voltage drivers: relays, solenoids, lamps, hammers, displays, transistors, etc. telephone mute switches, ringer circuits power supply, converters motor control 1 to-226aa (to-92) top view s d g 2 3 absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 300 v gate-source voltage v gs 20 v continuous drain current (t j = 150 c) t a = 25 c i d 0.18 continuous drain current (t j = 150 c) t a = 100 c i d 0.14 a pulsed drain current a i dm 0.5 power dissipation t a = 25 c p d 0.8 w power dissipation t a = 100 c p d 0.32 w maximum junction-to-ambient r thja 156 c/w operating junction and storage temperature range t j , t stg 55 to 150 c notes a. pulse width limited by maximum junction temperature. updates to this data sheet may be obtained via facsimile by calling siliconix faxback, 1-408-970-5600. please request faxback document #70206.
TN3012L 2 siliconix p-37409erev. b, 04-jul-94 specifications a limits parameter symbol test conditions min typ b max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 10 a 300 320 v gate-threshold voltage v gs(th) v ds = v gs , i d = 0.25 ma 0.8 2.1 3.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 10 na zero gate voltage drain current i dss v ds = 120 v, v gs = 0 v 0.1 a zero gate voltage drain current i dss t j = 125 c 5 a on-state drain current c i d(on) v ds = 5 v, v gs = 10 v 0.2 0.5 a v gs = 10 v, i d = 0.18 a 9 12 drain-source on-resistance c r ds(on) v gs = 4.5 v, i d = 0.14 a 11 20 t j = 125 c 20 40 forward transconductance c g fs v ds = 15 v, i d = 0.1 a 160 ms diode forward voltage v sd i s = 0.18 a, v gs = 0 v 0.8 v dynamic total gate charge q g 3300 gate-source charge q gs v ds = 50 v, v gs = 10 v, i d 100 ma 38 pc gate-drain charge q gd 1600 input capacitance c iss 40 output capacitance c oss v ds = 50 v, v gs = 0 v, f = 1 mhz 8 pf reverse transfer capacitance c rss 3 switching d turn on time t d(on) 5 10 turn - on time t r 50
20 40 ns turn - off time t d(off)
25 50 ns turn - off time t f 30 60 notes a. t a = 25 c unless otherwise noted. vnas30 b. for design aid only, not subject to production testing. c. pulse test: pw 300 s duty cycle 2%. d. switching time is essentially independent of operating temperature.
TN3012L siliconix p-37409erev. b, 04-jul-94 3 typical characteristics (25 c unless otherwise noted) 1.0 0.8 0.6 0.4 0.2 0 048121620 v gs = 10, 8 v 6 v 5 v 4 v 3 v output characteristics transfer characteristics on-resistance vs. gate-source voltage on-resistance vs. drain current v ds drain-to-source voltage (v) drain current (a) i d v gs gate-to-source voltage (v) drain current (a) i d on-resistance ( i d drain current (a) r ds(on) v gs gate-to-source voltage (v) on-resistance ( r ds(on) 20 16 0 12 8 4 0.8 1.0 0.6 0 0.4 0.2 0 1.0 0.2 0.4 0.6 0.8 02 10 468 25 c 125 c t j = 55 c 048121620 i d = 0.1 a i d = 0.5 a 16 0 12 8 4 v gs = 10 v v gs = 4.5 v 2.5 2.0 0 50 25 0 25 50 75 100 125 150 1.5 1.0 0.5 on-resistance vs. junction temperature (normalized) on-resistance ( t j junction temperature ( c) r ds(on) threshold voltage variance over temperature threshold voltage (v) v gs(th) 4 5 0 50 25 0 25 50 75 100 125 150 3 2 1 i d = 1 ma t j junction temperature ( c)
TN3012L 4 siliconix p-37409erev. b, 04-jul-94 typical characteristics (25 c unless otherwise noted) normalized effective transient thermal impedance, junction-to-ambient (to-226aa) square wave pulse duration (sec) normalized effective transient thermal impedance source-drain diode forward voltage v sd source-to-drain voltage (v) source current (a) i s 2 0 0.5 2.5 0.2 0.001 0.01 1.0 1.5 2.0 t j = 25 c t j = 150 c 1 0.1 0.01 10 4 10 3 10 2 10 1 11030 duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 0.1 200 160 120 0 80 40 capacitance v ds drain-to-source voltage (v) c capacitance (pf) c iss 010 50 20 30 40 c oss c rss 10 8 6 0 0 500 3500 4 2 1000 1500 2500 3000 2000 gate charge gate-to-source voltage (v) q g total gate charge (nc) v gs v ds = 150 v i d = 0.1 a
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